BF1208D T/R datasheet

Маркировка

BF1208D T/R
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BF1208D T/R Application: VHF/UHF Channel Type: N Configuration: Dual Continuous Drain Current: 0.03 A Drain Source Voltage (max): 6V Drain-source Breakdown Voltage: 6 V Gate-source Breakdown Voltage: 6 V Input Capacitance (typ)@vds: 2.1@5V@Gate 1/3.4@5V@Gate 2pF Lead Free Status / Rohs Status: Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Noise Figure (max): 1.7@Amp A/2@Amp BdB Number Of Elements: 2 Operating Temp Range: -65C to 150C Output Capacitance (typ)@vds: 0.8@5VpF Package / Case: SS-Mini-6 Package Type: SOT-666 Pin Count: 6 Power Dissipation: 180 mW Power Dissipation (max): 180mW Power Gain (typ)@vds: 36@5V@Amp A/35@5V@Amp BdB Reverse Capacitance (typ): 0.03@5VpF Screening Level: Military Transistor Polarity: N-Channel Other Names: BF1208D,115
Количество страниц

22 шт.
Формат

PDF
(Для просмотра требуется Adobe Acrobat Reader)
Размер файла

250,74 KB